At room temperature semiconductor technology for making devices such as electronic billboards will be (electronicbillboards) that large-scale applications, and RFID tags can be disposable applications, ultra-low-cost as possible. But most of the transistors at room temperature electron mobility is very low, only digital one percent per volt cm ^ sec (cm2/Vs). Now, Georgia Institute of Technology (Georgia Institute of Technology, Georgia Tech), the Researchers say that by using carbon-60 (C60) film Ball Buck (fullerenes) or fullerenes (fullerenes) to manufacture transistors (transistor) channel (channel), found a ratio of amorphous silicon can be produced (amorphous ) at room temperature to 100 times faster methods of manufacture of transistors. “We do not claim to be the first to make the C60 transistors at room temperature laboratory,” Professor GeorgiaTech BernardKippelen said: “The innovation of our R & D results is to prove that the process at room temperature and obtained a 3 ~ 5cm2 / Vs such a high electron mobility, but can also have good stability renewable (reproducibility), low threshold voltage, and switching High ratio (offcurrent report). “global research laboratory at room temperature in technology to take advantage of low prices, sword disaster Yao high performance? Printing technology Oll-to-roll) printing ink jet or to create large displays and low-cost applications such as RFID products, in that way, you do not need these expensive room own, the process at high temperature. But there are many ways tries to use organic materials in the transistors, but also tried to use the formula for finding new materials to improve the mobility of electrons in the channel. Other research units have achieved higher than the electron mobility GeorgiaTech study group, but especially through the process at high temperature? Made with transistors. Although U.S. industry has developed an inorganic silicon ink Kovio (inorganicsiliconink), can be manufactured using thin film transistors of inkjet printing, but? Process temperature is much higher than the plastic substrate could afford. Despite the results GeorgiaTech R & D, non-fulfillment process at high temperature can reach the mobility of electrons (Kovio says that mobility of electrons and silicon polycrystalline as good), they achieve the electron mobility than amorphous silicon was. Potential applications of technology as a means of production does not require that the refresh rate of 16 ms (refresh) the display of the service (for display), they can use plastic substrates at low cost. Improvements design in recent years on the basis Kippelen says his research team has identified the need for low temperature high electron mobility optimize the materials and parameters: “Our research is based on the refining organic semiconductors (purification) and treatment based on several years of experience. while the gate dielectric (gatedielectric) and the choice of metal electrode, but also play an important role. “Georgia Tech Professor Bernard Kippelen (center) at room temperature on transistor research and development projects, and researcher at the school and BenoitDomercq Zhang Xiao-Hong, a PhD candidate to work together. The convenience, component GeorgiaTech team model is manufactured in the silicon substrate, but the researchers said their use of organic transistors C60 all elements are made at room temperature. transistors used for the metal electrode at room temperature, it is used with OLED screen and plastics used in transparent solar cells? Way (transparentprocess) evidence given the same technology. “Our sensor is the use of masks (shadow masks) and thermal evaporation (thermalevaporation) process In the highlight of organic semiconductors; Kippelen said: “With the metal source (source) and between the substrate to keep sufficient distance (three feet), allows the substrate can be regarded as overheating process filing. “Then, researchers will study the production of N-channel and P channel transistor means, enjoy the ambient temperature of organic materials, the manufacture of active matrix display for CMOS inverters (inverters), ring oscillator ( ringoscillator), logic gate and the auxiliary drive circuit, etc.. “Replacing the silicon with a plastic floor, but also our future share research project Kippelen said. However, the production line using transistors C60 or there is a disadvantage is that they are sensitive to oxygen means that components must work in an environment of nitrogen. The researchers plan to re-form a fullerene molecule, and in the way of vacuum packing components to solve the problem.