Posts Tagged ‘High’

Triad Semiconductor Introduces Three New Configurable High Voltage Mixed Signal ASICs

Friday, November 4th, 2011

Triad Semiconductor Introduces Three New Configurable High Voltage Mixed Signal ASICs











VCA-9, 10, 11 High Voltage VCAs


Winston-Salem, NC (PRWEB) October 25, 2011

Triad Semiconductor Inc., the industry’s leading supplier of configurable mixed-signal ASICs, today announced the availability of a family of three new high-voltage via configurable arrays (VCAs). The new arrays, VCA-9, VCA-10, and VCA-11 enable the integration of high voltage analog, precision low voltage devices, digital functions and memory blocks into inexpensive single chip solutions. These new VCAs are fabricated on austriamicrosystem’s 0.35-micron H35 CMOS process optimized for high voltage mixed signal performance and digital integration. Applications such as high voltage analog filters, replacement of CPLD and analog designs, high voltage multi-channel data acquisition, sensor interface, high voltage actuators and power management can benefit from the mix of 3.3V, 5V, 10V and 20V resources available on these arrays.

“Many applications are seeing the need for higher voltages to interface with new sensors and provide improved noise immunity,” said Reid Wender, VP of Marketing at Triad Semiconductor. “These new VCAs are perfect companions for today’s low voltage processors and FPGAs that want to control high voltage resources cost effectively without risking damage to their sensitive deep sub-micron circuitry.” The VCA-9, VCA-10 and VCA-11 are based on Triad’s silicon-proven via-configurable array (VCA) technology, which allows designers to quickly and inexpensively customize analog and digital features with lower power consumption and greater system cost savings than previous ASIC solutions.

Technical Highlights

The VCA-9, VCA-10, and VCA-11 family of devices share similar analog and digital characteristics. The arrays provide a range of analog and digital capabilities with VCA-9 being the largest of the new arrays, VCA-10 smaller and VCA-11 the smallest of the three devices. This spread of capabilities allows designers to match their high voltage application to exactly the VCA that best fits their requirements thereby optimizing cost, package size and power consumption.

VCA-9 Technical Details

30 20V op-amps, 17 5V op-amps, 3,400+ 20V FETs, 3 12-bit ADCs, 2 10-bit DACs, 18.4K ASIC Gates, 24Kbits of SRAM, 78 20V analog I/O, 16 5V analog I/O, 46 digital I/O

VCA-10 Technical Details

3 20V op-amps, 48 5V op-amps, 2,200+ 20V FETs, 1 12-bit ADC, 2 10-bit DACs, 9.2K ASIC Gates, 12Kbits of SRAM, 50 20V analog I/O, 50 5V analog I/O, 31 digital I/O

VCA-11 Technical Details

3 20V op-amps, 40 5V op-amps, 1,650+ 20V FETs, 1 12-bit ADC, 2, 10-bit DACs, 6.9K ASIC Gates, 9Kbits of SRAM, 46 20V analog I/O, 42 5V analog I/O, 25 digital I/O

All of the analog and digital resources are arranged into tiles. A single Via-Only™ mask layer change configures and interconnects these analog and digital resources into a wide range of mixed signal circuits. If the design can be conceived of as an interconnection of op-amps, resistors, capacitors, logic and memory then the design can be implemented on a Triad VCA.

About Triad Semiconductor, Inc.

Triad Semiconductor, Inc., a privately held fabless semiconductor company with headquarters in Winston-Salem, North Carolina, develops and produces configurable mixed-signal ASICs. The company’s groundbreaking via-configurable array (VCA) technology delivers ASICs with silicon-proven analog and digital functions more quickly and at a lower cost than traditional full-custom approaches. Triad’s single-mask, Via-Only™ routing cuts engineering effort and fabrication time, resulting in fast-turn prototypes and allowing design changes to be made at minimal cost. For more information, please visit http://www.triadsemi.com or call (336) 774-2150.

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Vocus, PRWeb, and Publicity Wire are trademarks or registered trademarks of Vocus, Inc. or Vocus PRW Holdings, LLC.







Find More Analog CMOS Press Releases

Reverse Graded Buffers for CMOS Technologies: Reverse Graded High Content (x>0.75) Si(1-x)Ge(x) Virtual Substrates

Sunday, October 16th, 2011

Reverse Graded Buffers for CMOS Technologies: Reverse Graded High Content (x>0.75) Si(1-x)Ge(x) Virtual Substrates

Moore?s law suggests that the number of transistors which can be economically fabricated on a chip exponentially increases with time, traditionally this has been done by simple scaling of the channel within metal oxide semiconductor field effect transistors (MOSFETs). However, this approach is fast reaching fundamental limitations, which necessitates the substitution of different materials in traditional silicon devices to enhance their performance. A high composition (x>0.75) Si1-xGex alloy layer can be used as a buffer layer for such materials. However, buffers normally consist of a trade-off between structural quality factors and the physical attributes of any active channel layer are directly affected by those of the buffer which must not compromise device performance. In this work, a good quality high Ge composition SiGe buffer is investigated and is compared to more popular buffer fabrication techniques. All aspects from epitaxial growth to structural characterisation are explained from basic principles and should be useful for anyone in the semiconductor industry to gain a grasp of structural analysis which is typical for this field of research.

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Friday, June 24th, 2011

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Forza Silicon Announces High Definition CMOS Imaging Technology

Friday, May 6th, 2011

Forza Silicon Announces High Definition CMOS Imaging Technology











Pasadena, California (PRWEB) June 7, 2007

Forza Silicon Corporation announced today the availability of its groundbreaking proprietary FORZ-HD™ CMOS imaging technology, which supports frame rates up to 60 fps, proven at 33.2 Mega-pixel resolution, and features 12-bit on-chip ADCs. FORZ-HD™ technology is targeted for high resolution, high-speed, high dynamic range digital cameras used in professional photography or digital cinematography, and in medical, biotech, scientific, satellite and defense industries.

“FORZ-HD™ is a scalable technology that produces astounding image and video quality,” said Dr. Barmak Mansoorian, President of Forza Silicon. “The FORZ-HD™ advantages over CCD image sensors include the integration of thousands of column-parallel ADCs on-chip with an LVDS or CML interface, and, of course, lower cost,” said Dr. Daniel Van Blerkom, CTO of Forza Silicon.

FORZ-HD™ imaging technology is used in CMOS image sensors fabricated by Forza foundry partner Tower Semiconductor using 0.18 micron process. FORZ-HD™ is compatible with CMOS Image Sensor processes used by Forza foundry partner IBM Microelectronics.

About Forza Silicon Corporation

Forza Silicon is a fabless semiconductor provider of mixed signal IC design services and products. Forza specializes in the design of advanced CMOS image sensors, from ultra-high resolution imagers for medical, broadcasting, scientific and military applications to low-cost sensors for digital cameras, cellular camera phones and other consumer devices. Forza also excels in high speed optoelectronics comprising high speed data paths for fiber-optic, microwave and RF applications. In addition, Forza offers a wide range of mixed signal VLSI design services from custom IP block designs and SOC integration to chip characterization and design verification. More information can be found at http://www.forzasilicon.com/.

MEDIA CONTACT:

Rich Corrigan

Forza Silicon Corporation

Tel.: 1-626-796-1182

Fax: 1-626-796-5882

info @ forzasilicon.com

http://www.forzasilicon.com/

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Vocus©Copyright 1997-

, Vocus PRW Holdings, LLC.
Vocus, PRWeb, and Publicity Wire are trademarks or registered trademarks of Vocus, Inc. or Vocus PRW Holdings, LLC.







More CMOS Definition Press Releases

High Dynamic Range Imaging with sCMOS (Scientific CMOS)

Monday, April 18th, 2011

High Dynamic Range Imaging with sCMOS (Scientific CMOS)










Milpitas, CA (PRWEB) July 31, 2009

Scientists are reporting that the new sCMOS technology is proving essential for scientific imaging applications because, for the first time, it is allowing for the accurate measurement of structures that are very dim as well as structures that are very bright in the same field of view. Scientific imaging applications such as fluorescence microscopy will realize significant benefit from this high dynamic range delivered by sCMOS technology. In addition to intra-scene variation, inter-scene variations in intensity also require a camera with a large dynamic range. An example of this is calcium ratiometric imaging where signals can vary greatly in intensity on a frame to frame basis.

The dynamic range of an image sensor is defined as the ratio of the maximum to minimum signal that can be measured. In practice, this is determined by the ratio of pixel full well capacity to the readout noise. Therefore, large pixel full well and small readout noise are both necessary for optimal dynamic range. In order to utilize the full well of a CMOS pixel, the amplifier gain must be kept low. For example, given a 1.5V swing on the output of the amplifier, a 30,000 electron signal will require a gain of 1.5V/30,000e- = 50uV/e-. This will allow measurement of the full well signal but will not allow for the lowest possible read noise. In order to get a very low readout noise and the resulting superior sensitivity, a value of 1500uV/e- would be ideal but this would mean that the largest signal would be limited to 1000e- maximum which is only 1/30th of the total well size. This leaves a quandary of whether to choose maximal sensitivity or high dynamic range imaging.

PCO, Andor and Fairchild together have taken a novel design approach in sCMOS technology by implementing both approaches simultaneously. sCMOS technology has a high-gain amplifier to get the lowest possible noise on one output and a low-gain amplifier to get the largest possible signal on another output. These two amplifiers are simultaneously read out and converted into digital values allowing both signals to be combined for a higher dynamic range image.

As shown in the sCMOS White Paper released on June 16th at the Laser World of Photonics show, both circuits incorporate high performance 11 bit ADCs to produce 2048 gray levels of significant data. Both outputs are sent to the camera which could either combine the data into one 16 bit image or leave it in two 11-bit data streams. This means, depending on the camera system, that a user could select high sensitivity data for one application, high signal data for another application or a combined high dynamic range data that maintains high SNR for both the low and the high end of the data range.

This approach allows the scientific user to get high quality linear data for both dim and bright targets within the field of view while getting unparalleled sensitivity due to the ultra-low noise of the readout. This high dynamic range combination makes sCMOS technology a compelling solution for many scientific imaging applications.

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Vocus©Copyright 1997-

, Vocus PRW Holdings, LLC.
Vocus, PRWeb, and Publicity Wire are trademarks or registered trademarks of Vocus, Inc. or Vocus PRW Holdings, LLC.







Sony HDR-HC9 High definition footage cmos sensor

Monday, April 11th, 2011

Sony HDR-HC9 HD footage from last summer/autumn WATCH IN HD
Video Rating: 5 / 5

My Sony HDR-FX7 HDV CMOS Camcorder just arrived…here’s sample footage.

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Tuesday, March 29th, 2011

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Casio EX-FH100 10. 1MP High Speed Digital Camera

Thursday, March 3rd, 2011

Casio EX-FH100 10. 1MP High Speed Digital Camera

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Home Page > Hobbies > Photography > Casio EX-FH100 10. 1MP High Speed Digital Camera

Casio EX-FH100 10. 1MP High Speed Digital Camera

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Posted: Jan 14, 2010 |Comments: 0
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Casio predominantly provides digital cameras to make the beginning photographer as well as advanced photography markets, even though the manufacturer does offers some high- speed models for more advanced photography enthusiasts. The EXILIM line of digital cameras may be known for its market- leading products starting with its super slim point- and- shoot digital cameras. The Casio Exilim selection of Digital Cameras is definitely an unparalleled fusion of technology and design. Casio was very pleased at the Los Vegas trade show to introduce a number of new versions of the EXILIM series of digital cameras powered by Casio advanced- speed technologies”, said Toshi Iguchi”, senior general manager of Casio Digital Imaging Division. Casio continues to create digital cameras that improve the image taking and sharing experience while also providing consumers with convenience, accessibility and quality loaded into a slim, sleek body. Their 10. 1 effective megapixel high- speed digital camera boasts an extensive- angle 24 mm 10X optical zoom lens in the compact body so it is very portable anywhere. It also gives users a maximum burst rate of 40 shots per second for still photos(the highest level of picture size of 9. mp and maximum shooting capacity of 30 shots) that may now be used to capture distant subjects thanks to the high- power zoom. It also enables up to 1, 000 fps high- speed movie recording that captures motion which is ordinarily too fast for the human eye to see. Their EX- FH100 will allow you ranging from advanced amateur photographers to beginners to enjoy high- speed burst shooting. It is equipped with a mode dial that enables manual exposure burst shooting and in addition has a mode that makes high- speed burst shooting easy, a feature that sets the burst shooting speed for the optimal rate by selecting the type of scene. With this model, Casio also achieves low- noise, high- quality photography even in dim indoor lighting by using a highly sensitive CMOS sensor.

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About the Author:Pros/Cons. . . A real nice camera. . does what it says it will do and last but not least the price will not break the Bank. . . for more information go to http://CASIOEXILIMDIGITALCAMERAREVIEW. Com/

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Micro Oscillator, Inc. Releases a High Temperature All Silicon CMOS I.C. Clock Oscillator that will replace Ceramic Resonators used for Automotive Engine Applications.

Monday, February 28th, 2011

(PRWEB) December 3, 2003

Bala Cynwyd, PA (PRWEB) December 3, 2003 Â? Micro Oscillator, Inc., an innovative provider of all silicon CMOS I.C. clock oscillators, today announced the release of its new high temperature (+150 deg C) version of the MOI-2000 clock oscillator.

The MOI-2000 clock oscillator is a CMOS integrated circuit that provides the frequency accuracy of ceramic resonators in microcontroller based systems while operating in harsh environments. The MOI-2000 is very durable, reliable and starts up fast at the correct frequency every time. Unlike ceramic resonators or crystal oscillators that rely on mechanical vibration for frequency generation, the MOI-2000 generates its frequency electronically with no mechanical vibration

The MOI-2000 is available for 5V or 3.3V in the frequency range from 2MHz to 12MHz. The patented oscillator can operate at +/- 1.0% total frequency accuracy over an automotive temperature range of Â?40 deg C to 150 deg C at shock and vibration of up to 80,000gÂ?s. Total tolerance is inclusive of initial frequency tolerance, tolerance over temperature and voltage, and long-term tolerance.

The MOI-2000 is a proven product that is used on board F/A-18 fighters and inside military smart-bombs; Micro Oscillator, Inc. breakthrough technology is also available to licensees for direct IC integration as a total replacement for conventional multiple component-based solutions.

Production samples of the MOI-2000 are available now in SOP-8 and MSOP-8 I.C. packages.

About Micro Oscillator, Inc.

Micro Oscillator, Inc. is revolutionizing the way microcontrollers are clocked with its all silicon CMOS I.C. clock oscillators. The Micro OscillatorÂ? is a CMOS integrated circuit using patented temperature and voltage compensation technology. The Micro Oscillator can achieve precise frequency accuracy over the temperature and voltage range without using ceramic resonators, quartz crystals or other external components for frequency determination. For more information, please visit www.micro-oscillator.com.

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Find More CMOS Circuit Press Releases

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