Posts Tagged ‘nanometer’

Testing for defects oriented nanometer CMOS VLSI

Monday, August 9th, 2010

process tolerances DescriptionFailures technology products with nano-metric for failure and reduced to give rise to significant challenges for IC testing. As the variation of basic parameters such as channel length, threshold voltage, the thin oxide thickness and interconnect dimensions is well beyond acceptable limits, new test methods and a deeper understanding of physics Vice-fault mappings are needed. Testing for defect oriented nanometer CMOS VLSI C.. . More>>

Testing for defects oriented nanometer CMOS VLSI

Nanometer CMOS VLSI Circuits: Design for manufacturability

Thursday, April 22nd, 2010

Product DescriptionCutting edge of design for manufacturability techniques Nanoscale CMOS VLSI failure analysis CircuitsCovering, equipment, and control evaluations lithography, this book provides a holistic approach to VLSI circuit designers to evaluate and analyze IC circuit designs in terms of manufacturability. This practical guide is ideal for design engineers, managers, students and academics interested in understanding the sources of semiconductor v. . . More>>

Nanometer CMOS VLSI Circuits: Design for manufacturability

Low-Power High-Speed ADCs for Nanometer CMOS Integration

Tuesday, April 20th, 2010

Product DescriptionLow-Power High-Speed ADCs for Nanometer CMOS Integration is about the design and implementation of ADC in nanometer CMOS processes that achieve lower power consumption for a given speed and resolution than previous designs, through architectural and circuit innovations that take advantage of unique features of nanometer CMOS processes. A phase lock loop (PLL) clock multiplier has also been designed using new circuit techniques and successfully tested. 1) A . . . More >>

Low-Power High-Speed ADCs for Nanometer CMOS Integration

Nanometer CMOS RFICs for mobile TV applications

Monday, April 12th, 2010

Product DescriptionNanometer CMOS RFICs for mobile TV applications focuses on how to break the tradeoff between energy consumption and performance (linearity and noise) through optimization of mobile TV by the end of the dynamic range by three levels Hierarchical: the intrinsic MOS transistor level, circuit level and the level of architecture. He begins by discussing the basic concepts of MOSFET dynamic range, including non-linearity and noise. He then introduced at the circuit. . . More>>

Nanometer CMOS RFICs for mobile TV applications

Cost-effective methods for high-speed nanometer CMOS VLSI Design: Circuits and Interconnection

Wednesday, March 31st, 2010

the semiconductor industry has followed Moore DescriptionThe product? s law over the last five decades because of the ongoing intensification CMOS process. This scaling has led to reduced chip costs, higher density of integration and better design performance. On the other hand, many new design challenges have been made because of the scale, and these chanllenges become more important when migrating a node with a new technology to small art functionality. . More>>

Cost-effective methods for high-speed nanometer CMOS VLSI Design: Circuits and Interconnection