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SVTC, Amerimade Technology and Shanghai Sinyang Semiconductor Materials Form Partnership to Expand Advanced Electroplating Process Capabilities

Thursday, November 17th, 2011

SVTC, Amerimade Technology and Shanghai Sinyang Semiconductor Materials Form Partnership to Expand Advanced Electroplating Process Capabilities

SAN JOSE, CA (PRWEB) October 19, 2011

SVTC Technologies, the premier innovation partner for accelerating nanotechnology development and commercialization, announced today that it is partnering with Amerimade Technology and Shanghai Sinyang Semiconductor Materials to advance process development and production readiness for electroplating applications. This unique combination of engineering expertise, production knowhow, chemistry products and electroplating equipment provides customers access to advanced electroplating development capabilities supporting through-silicon via (TSV) technology and continues an ongoing SVTC strategy to create an ecosystem of partners that enables comprehensive value-added solutions for customers.

Similar to signal vias used in printed circuit boards, TSVs allow for signals to pass through the silicon substrate — a major advantage over traditional packaging and chip-to-chip interconnect schemes. TSVs enable advanced packaging technologies such as 3D IC integration where multiple chips can be stacked on top of each other for improved packaging density and improved signal performance. TSV technology is also critical for next-generation microelectromechanical systems (MEMS).

Given the advanced nature of TSV technology, many manufacturers do not have the process expertise nor tool sets required to develop the electroplated film solutions required for leading-edge devices and packaging. This partnership delivers over 95,000 square feet of state-of-the-art cleanroom, staffed 24/7, with a highly versed engineering team provided by SVTC, powered by electroplating tool sets and knowhow from Amerimade and chemical solutions from Shanghai Sinyang. In addition to providing manufacturers access to these vital technologies, this partnership focuses on developing new electroplating processes.

“SVTC is committed to providing our customers with the most innovative nanotechnology development and commercialization services for next-generation devices,” said Wilbur Catabay, Vice President Technology Solutions for SVTC Technologies. “Working with both Shanghai Sinyang and Amerimade Technology will help our customers accelerate process development and demonstrate production readiness for 3D IC and MEMS technology.”

The genesis of the partnership arose from each partner’s long-standing familiarity with the other’s experience, capability, competence and success in their respective business areas. Customers can expect to receive a broad range of solutions from process demonstrations to a robust commercialization process that can take an idea, demonstrate its value as a proof of concept, and then drive the capability of its processes and integration to production readiness.

“Our technology partnership with SVTC represents an outstanding combination of Amerimade’s many years of success with the engineering and manufacturing of electroplating equipment for the semiconductor, MEMS, data storage and life science markets, with SVTC’s compelling concept-to-commercialization business model and Shanghai Sinyang’s chemical expertise,” said Mark Blaze, VP of Customer Operations from Amerimade Technology. “We believe the partnership will have immediate and positive impact on our customers’ ability to rapidly and successfully develop and adopt electroplating solutions for their products.”

SVTC Technologies provides a complete range of solutions through in-house capabilities and a network of service and production partners. Based on years of hands-on, collaborative experience, SVTC continues to assemble an ecosystem of valued partners that provides a full complement of specialized services and enables a broad array of technology development capabilities.

About Shanghai Sinyang Semiconductor Materials:

Shanghai Sinyang Semiconductor Materials Co., Ltd is a leading-edge technology company, concentrating on research and development, design, and manufacturing of advanced chemicals for the electronics industry. The company is mainly involved in electronics, semiconductor manufacturing, packaging test and assembly, solar cell manufacturing and avionics. Shanghai Sinyang is focused on chemical solutions supporting through-silicon vias, micro-bumping, MEMS, solar cells and other wafer-level plating. The company also develops ultra-pure materials and chemicals for wafer-level wet processes such as photoresist stripping and cleaning. More information can be found at http://www.sinyang.com.cn.

Media Contact:

Shanghai Sinyang Semiconductor Materials

Wenyan Zhi

VP – Marketing & Sales

wenyan_zhi(at)sinyang(dot)cn

+86 138-0198-2015

About Amerimade Technology:

Amerimade Technology Inc. designs, manufactures and provides long-term field support for an expansive array of wet chemical processing systems. Based in Livermore, CA, Amerimade applies 20 years of experience to deliver equipment solutions that meet the unique needs of every customer, whether manual systems for R&D, or fully automated systems for high volume production and processes, including plating (electrolytic and electro-less, single element and alloy, magnetic and non magnetic), wet etching, stripping, cleaning, pattern develop, electro-etch and electro-polish. Industries served include semiconductor, MEMS, data storage, life sciences and PV solar. Amerimade provides compatibility with the complete range of SEMI-standard wafers as well as virtually all other substrates and devices requiring wet chemical processing and custom fixtures. Field support is provided through Uptime Semiconductor Equipment Services, our wholly-owned services division. More information can be found at http://www.amerimade.com.

Media Contact:

Amerimade Technologies, Inc.

Mark Blaze

VP – Customer Operations

mark.blaze(at)amerimade(dot)com

925-243-2305

About SVTC:

SVTC Technologies provides development and commercialization services for innovative semiconductor process-based technologies and products, cost effectively and in an IP-secure manner. Through facilities in San Jose, California and Austin, Texas, SVTC serves customers in rapidly growing markets such as MEMS, microfluidics, high voltage, and TSV that are used in a wide array of industries such as semiconductor fabrication, life science, aerospace and defense, consumer mobility and clean energy. SVTC offers a suite of leading-edge equipment and services, including full-scale 8-inch and 12-inch process capabilities, advanced CMOS and non-CMOS equipment, analytical services, development support tools and commercialization services. SVTC is ISO 9001, ISO 13485 and ITAR registered. SVTC’s investors include Oak Hill Capital Partners, Tallwood Venture Capital and the company’s management and employees. SVTC is an equal opportunity employer. More information can be found at http://www.svtc.com.

Media Contact:

SVTC Technologies

Rich Brossart

Sr. Director of Marketing

Rich.Brossart(at)svtc(dot)com

408-240-7252

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, Vocus PRW Holdings, LLC.
Vocus, PRWeb, and Publicity Wire are trademarks or registered trademarks of Vocus, Inc. or Vocus PRW Holdings, LLC.

More CMOS Circuit Design Press Releases

Tags: Advanced, Amerimade, capabilities, Electroplating, Expand, Form, materials, Partnership, Process, semiconductor, Shanghai, Sinyang, SVTC, technology
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A New Market Report and Analysis; Semiconductor Timing Opportunities in Communications ?

Monday, November 7th, 2011

A New Market Report and Analysis; Semiconductor Timing Opportunities in Communications …

Cupertino, CA (PRWEB) May 27, 2011

Consulting Services & Associates LLC (CS&A LLC) announced release of its latest Market Report and Analysis focused upon on the Semiconductor Timing Markets covering CY2010 Thru Q1-CY2011 Crystal and Oscillators, RF Timing support, and Semiconductor Clock and Timing – This new report entitled “Clock and Timing Opportunities in Communications Infrastructure” details specific opportunities for Semiconductor Timing in datacom, telecom, and wireless infrastructure.

This unique report is a comprehensive drill down with detail on the full spectrum of Semiconductor Timing in this key segment: Crystals in KHz and MHz, all Oscillator categories, Semiconductor Clock and Timing, and high value RF Timing support.

Combined, these Timing segments represented $ 1.4B USD in sales for CY2010, with growth of 7% YoY to reach $ 1.86B in 2014…

This report:

    includes an overview of enterprise and carrier equipment including equipment segmentation, equipment block diagrams, profiles of key accounts,
    quantifies and segments the market for Quartz and IC products and forecasts growth through 2014,
    identify key requirements for successful products,
    analyzes competition and identifies key competitive issues and opportunities, and
    outlines emerging technologies and identifies new markets that will drive future growth.

This new report was authored by Mr. Allan Armstrong (who joined CS &A LLC in November from Maxim) and Mark Sherwood – combined, these two associates have more than 50 years of timing industry experience… According to Mark Sherwood, Principal Associate and CEO at CS &A: “CS &A LLC provides a unique methodology in reporting – we call it Top Down/Bottoms up, where we focus on specific semiconductor timing product consumption by Market Segment and then by Application – all with weighted $ ASP’s to roll up into the TAM and Forecasts.” Mr. Sherwood added; “2010 was indeed a record year in volume and revenues for Semiconductor Timing and our expectation is to see 2011 with continued, but lessened growth. The communications segment requires the most in terms of value added in Timing solutions and as such, commands high $ ASP’s into this segment. Performance, stability, accuracy and feature sets put timing products into the precision and ultra-precision categories yielding device $ ASP’s in dollars, not dimes, so a lot of attention is placed here by many tier one suppliers in timing.”

Mr. Sherwood added; Communications applications are where we find the really key performers in terms of suppliers, technologies employed and products in the market. This includes Quartz, SAW, BAW, MEMS, Atomic Clocks, Fanout Buffers, Fractional and Integer PLL ICs and more. Given the value added in these products, ASPs are high, in the range of $ 2-$ 50, and the supply base is limited due the cost and difficulty of achieving precision and ultra-precision specifications – (I.e.: Phase Noise (8KHz – 20MHz), acceptable IDD, Frequency range (100Mhz-1.25GHz), Frequency stability (measured in ppm), and more.

We see the Communications segment growing significantly for Semiconductor Timing with more infrastructure and backhaul deployments, required to support unrelenting traffic growth driven by Smart Phones and the explosion of video traffic in the internet. Many applications require fixed frequency, while others need some flexibility (VCXO/VCTCXO) with variable frequency solutions – All in all, the attributes are very visible and as such, many suppliers try to target entry in this segment.”

The report shows that new technologies have made measurable penetration into this segment in 2010 and more going into 2011 – MEMS based timing along with compensated CMOS (Compensated LC and RC) are just now making their respective entries, so the field is heating up for incumbent suppliers in CMOS, BiCMOS, and SiGe based solutions.

The report release date is the 25th of May, 2011, and both single user and enterprise licenses are available. Pricing for this report is set at; $ 4,250.00 (enterprise) / $ 3,800 (single user) and CS &A LLC provides 2 hours of report related consulting with each license.

CS&A’s overall timing market analysis and findings are available in its “CY2010-2011 Crystal & Oscillator” report and the CY2010-2011 Semiconductor Clock & Timing report. A Combined Timing report with all segments is also available. The reports provide a detailed and unique look at the full spectrum of the Semiconductor Timing market providing TAM, detailed consumption, and forecasts for all major product categories, plus supplier market shares. According to Mr. Sherwood; “Combining our unique top down/bottoms up methodology, market trends, actual’s; by product category, product segment, and technology, supplier base detail, TAM, Forecast and technologies employed, CS &A creates what we call the “Timing MarketScape,” providing a unique and full spectrum view of this dynamic market. – This is truly unique in the industry, and we believe we are the only group able to do so today.” Supplier dossiers, which complement with the reports, can be purchased separately.

About Consulting Services & Associates

Consulting Services & Associates LLC (CS&A) founded in 2002, is headquartered in the heart of the Silicon Valley, centrally located in Cupertino, California. CS&A LLC is today, the recognized leader in Semiconductor Timing reporting and analysis, and provides unique and innovative reports and limited consulting resources specializing in: Technical Issue Resolution – Market research and Analysis – Product Definition – Project Management – Marketing Support Services – Due Diligence services, & Strategic Research and Planning. If you are interested in learning more about CS&A offerings, please email us at CS &A LLC; Info(at)timing-is-everything(dot)net, or Reports can be purchased online at http://www.timing-is-everything.net.

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, Vocus PRW Holdings, LLC.
Vocus, PRWeb, and Publicity Wire are trademarks or registered trademarks of Vocus, Inc. or Vocus PRW Holdings, LLC.

Related CMOS Buffer Press Releases

Tags: Analysis, communications, Market, opportunities, Report, semiconductor, Timing
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Triad Semiconductor Introduces Three New Configurable High Voltage Mixed Signal ASICs

Friday, November 4th, 2011

Triad Semiconductor Introduces Three New Configurable High Voltage Mixed Signal ASICs

VCA-9, 10, 11 High Voltage VCAs

Winston-Salem, NC (PRWEB) October 25, 2011

Triad Semiconductor Inc., the industry’s leading supplier of configurable mixed-signal ASICs, today announced the availability of a family of three new high-voltage via configurable arrays (VCAs). The new arrays, VCA-9, VCA-10, and VCA-11 enable the integration of high voltage analog, precision low voltage devices, digital functions and memory blocks into inexpensive single chip solutions. These new VCAs are fabricated on austriamicrosystem’s 0.35-micron H35 CMOS process optimized for high voltage mixed signal performance and digital integration. Applications such as high voltage analog filters, replacement of CPLD and analog designs, high voltage multi-channel data acquisition, sensor interface, high voltage actuators and power management can benefit from the mix of 3.3V, 5V, 10V and 20V resources available on these arrays.

“Many applications are seeing the need for higher voltages to interface with new sensors and provide improved noise immunity,” said Reid Wender, VP of Marketing at Triad Semiconductor. “These new VCAs are perfect companions for today’s low voltage processors and FPGAs that want to control high voltage resources cost effectively without risking damage to their sensitive deep sub-micron circuitry.” The VCA-9, VCA-10 and VCA-11 are based on Triad’s silicon-proven via-configurable array (VCA) technology, which allows designers to quickly and inexpensively customize analog and digital features with lower power consumption and greater system cost savings than previous ASIC solutions.

Technical Highlights

The VCA-9, VCA-10, and VCA-11 family of devices share similar analog and digital characteristics. The arrays provide a range of analog and digital capabilities with VCA-9 being the largest of the new arrays, VCA-10 smaller and VCA-11 the smallest of the three devices. This spread of capabilities allows designers to match their high voltage application to exactly the VCA that best fits their requirements thereby optimizing cost, package size and power consumption.

VCA-9 Technical Details

30 20V op-amps, 17 5V op-amps, 3,400+ 20V FETs, 3 12-bit ADCs, 2 10-bit DACs, 18.4K ASIC Gates, 24Kbits of SRAM, 78 20V analog I/O, 16 5V analog I/O, 46 digital I/O

VCA-10 Technical Details

3 20V op-amps, 48 5V op-amps, 2,200+ 20V FETs, 1 12-bit ADC, 2 10-bit DACs, 9.2K ASIC Gates, 12Kbits of SRAM, 50 20V analog I/O, 50 5V analog I/O, 31 digital I/O

VCA-11 Technical Details

3 20V op-amps, 40 5V op-amps, 1,650+ 20V FETs, 1 12-bit ADC, 2, 10-bit DACs, 6.9K ASIC Gates, 9Kbits of SRAM, 46 20V analog I/O, 42 5V analog I/O, 25 digital I/O

All of the analog and digital resources are arranged into tiles. A single Via-Only™ mask layer change configures and interconnects these analog and digital resources into a wide range of mixed signal circuits. If the design can be conceived of as an interconnection of op-amps, resistors, capacitors, logic and memory then the design can be implemented on a Triad VCA.

About Triad Semiconductor, Inc.

Triad Semiconductor, Inc., a privately held fabless semiconductor company with headquarters in Winston-Salem, North Carolina, develops and produces configurable mixed-signal ASICs. The company’s groundbreaking via-configurable array (VCA) technology delivers ASICs with silicon-proven analog and digital functions more quickly and at a lower cost than traditional full-custom approaches. Triad’s single-mask, Via-Only™ routing cuts engineering effort and fabrication time, resulting in fast-turn prototypes and allowing design changes to be made at minimal cost. For more information, please visit http://www.triadsemi.com or call (336) 774-2150.

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Tags: ASICs, Configurable, High, introduces, mixed, semiconductor, signal, three, Triad, Voltage
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Evolution of Semiconductor Parameter Analyzers for Three Critical Types of Semiconductor Measurement ? Part II

Saturday, May 28th, 2011

Evolution of Semiconductor Parameter Analyzers for Three Critical Types of Semiconductor Measurement – Part II

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Home Page > Technology > Evolution of Semiconductor Parameter Analyzers for Three Critical Types of Semiconductor Measurement – Part II

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Evolution of Semiconductor Parameter Analyzers for Three Critical Types of Semiconductor Measurement – Part II

By: Lee Stauffer
Posted: Jul 13, 2010

To replace traditional DC I-V techniques, various implementations of high-speed (i.e., pulsed) I-V techniques have been developed for applications such as characterizing high-k dielectrics and Silicon-On-Insulator (SOI) isothermal testing. When testing SOI devices with traditional DC I-V techniques, their insulating substrates cause them to retain the self-heat generated by the test signal, skewing their measured characteristics; testing with pulsed signals reduces this effect. Similar problems arise in the testing of high-k gate structures of CMOS devices, nanotechnology devices, solar cells, and many materials using advanced technologies.

Traditional High-Speed-Pulse/Measure Systems. Earlier high-speed-pulse/measure test systems typically involved an external pulse generator, a multi-channel oscilloscope, specially designed interconnect hardware, and software to integrate and control the instruments. Unfortunately, this approach tended to create latencies that complicated the coordination of signal source and measurement functions.

Depending on the instruments and how well they were integrated, it could also place limitations on how short the pulses and their duty cycle could be. Despite these limitations, users of these earlier pulsed I-V test systems soon began applying them to a variety of other characterization tasks, including non-volatile memory testing, ultrafast NBTI reliability testing, and many other applications.

Given their somewhat limited dynamic range, these systems remained something of a specialty technology. In order to become a mainstream test technology, the next generation of ultra-fast I-V testing systems would have to provide a very broad source and measure dynamic range. That meant they had to be able to source sufficient voltage to characterize flash memory devices, as well as voltages low enough to handle the latest CMOS processes.

For example, consider an embedded flash device in a CMOS process—the flash device might require up to 40V to program, but the CMOS process is running on 2.5V, so the test system used must be able to supply voltages for both requirements. It also needed to have a broad enough current range to handle the newest technologies, and fast enough rise times and long enough pulse widths to cover a wide range of applications. It had to be simple to use, and have an interconnect system that would allow the system to deliver accurate results reliably.

The New Generation of Parameter Analyzers. Semiconductor parameter analyzers have evolved to solve many of these test problems. Now it’s possible to find test systems that combine DC I-V, C-V, and ultra-fast pulse I-V test capabilities. For example, in the Keithley Model 4200-SCS system, the Model 4225-PMU Ultra-Fast I-V Module has been added to the DC I-V and C-V measurement modules. Thus, all three required measurement types can be integrated in a single test system that’s optimized for advanced applications such as:

Flash, PCRAM, and other nonvolatile memory tests
Isothermal testing of medium-sized power devices
Materials research testing for scaled CMOS, such as high-k dielectrics
NBTI/PBTI reliability tests
LDMOS testing
Testing of III-V materials and devices such as GaAs

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Naturally, the computerized operating system and test library of an integrated test system of this type must make it easy handle a broad range of test protocols, and quickly switch between the three different types of test. An example of this is the Keithley Test Environment Interactive (KTEI) operating software, which provides a single test environment that allows a user to combine measurements made with different instrument types into a single test sequence.

By using plug-in modules for the hardware chassis in a parameter analyzer, the test system can be readily optimized to address specific applications or sets of applications. Just as important, as new applications come along, a modular architecture allows for cost-effective system upgrades. For instance, in the Model 4200-SCS system, builders can choose from medium- and high-power Source-Measure Units for DC I-V measurements, an optional capacitance meter for C-V measurements, and an ultra-fast (pulsed) I-V module for high-speed pulse measurements.

Thus, the latest generation of parameter analyzers offers users a complete solution for an application like charge pumping, because the test system can be configured for the ultra-fast pulse generation and sensitive DC current measurements required. The test libraries include predefined tests for making most of the common charge pumping measurements, such as a pulsed base voltage sweep or a pulsed voltage amplitude sweep. In the case of solar cell testing, integrated I-V and C-V measurement capabilities make it possible to perform a wide range of measurements, including capacitance-frequency (C-f), drive level capacitance profiling (DLCP), four-probe resistivity (?, ?), and Hall voltage (VH). In addition, the software automates the measurements and provides results analysis.

Pushing the Limits of Instrumentation. While it’s important for a test system to handle the day-to-day measurements of modern devices and materials, the development of leading edge technology often demands more. This makes parameter analyzers with open system architectures even more important. To address the needs of advanced technologies, Keithley’s Model 4200-SCS allows users to modify any of the measurements in its test libraries, such as C-V, C-t, and C-f measurements. This opens the door for more customized testing and analysis, such as that needed for solar cells; high- and low-k structures; MOSFETs; BJTs; diodes; III-V compound devices; carbon nanotube (CNT) devices; doping profiles, TOX, and carrier lifetime tests; as well as junction, pin-to-pin, and interconnect capacitance measurements.

System speed and hardware flexibility are equally important, including the ability to add external instrumentation without sacrificing throughput and measurement performance. Many of the new ultra-fast I-V tests that lab users wish to perform, such as charge pumping and NBTI testing, may require greater current sensitivity than a standard instrument module provides (e.g., the Keithley Model 4225-PMU). This may require the addition of an external preamp.

For such an application, the optional Model 4225-RPM Remote Amplifier/Switch for Keithley’s parameter analyzer offers additional low current ranges that extend the system’s current sensitivity down to tens of picoamps. It also reduces cable capacitance effects and supports automatic switching as needed between the system’s ultra-fast pulse module, C-V module, and SMU modules to perform different types of testing on the fly. There is no need to disconnect a module’s wiring then reconnect it to a different instrument. These features reduce test system latencies and help improve throughput.

Older parameter analyzers typically were designed for specific types of test within the current-sensitivity/measurement-time application space, such as ultra-fast (UF) NBTI in statistical process control testing (SPCT), and even higher speeds in PCRAM testing. The traditional DC I-V SMU can source and measure currents up to about 1A and down to about a picoamp. Although adding a remote preamplifier allows resolving signals as low as 0.1fA, the best speed is about 10 milliseconds. In contrast, the Keithley Model 4225-PMU ultra-fast I-V module allows making a measurement in as little 10ns, which is critical for characterizing device recovery. Its optional remote amplifier/switch extends the current resolution of the module down to tens of picoamps, just slightly above the limit established by the Johnson noise produced by devices under test.

Part III of this 3-part article will discuss cabling considerations for different types of testing. This can be just as important as instrument capabilities in achieving the optimum throughput and signal integrity.

Lee Stauffer – About the Author:

Lee Stauffer is the Senior Staff Technologist for Keithley Instruments’ Semiconductor Measurements Group, based in Cleveland, Ohio. Prior to joining Keithley, his career included designing satellite communication systems, as well as equipment and product engineering in semiconductor fabs. Keithley designs, develops, manufactures and markets complex electronic instruments and systems geared to the specialized needs of electronics manufacturers for high-performance production testing, process monitoring, product development and research.

Source: http://www.articlesbase.com/technology-articles/evolution-of-semiconductor-parameter-analyzers-for-three-critical-types-of-semiconductor-measurement-part-ii-2823418.html

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Article Tags:
ac impedance, cabling, capacitance meter, capacitance voltage, carbon nanotube, carrier lifetime, c f sweep, charge pumping, cmos

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South China Sea Layout: build semiconductor lighting the whole industry chain

Wednesday, February 16th, 2011

Foshan is the important production and R & D base electric light, electric light output value of 2009, 10.0 billion, with electric light industry, 45 high-tech enterprises in Guangdong area of R & D center power source 5, the relevant upstream and downstream enterprises 400 many.

Foshan South China Sea as a light source lighting the core area of the industry chain, from upstream of the material with, electric light source to the downstream lighting, mold and application side complete industrial chain, and closely integrate all aspects of upstream and downstream integration of a strong supporting capacity. In order to fully extend the advantages of traditional electric lighting industry, the South China Sea area has for the semiconductor industry, the development of this new lighting first established high-tech services to the financial district of Guangdong, the Guangdong Urban Industry Base, the South China Sea Economic Zone, Luocun new light industrial base, the South China Sea national ecological industrial park and other mature carrier.

In the semiconductor lighting industrial upgrading in the process of gathering the snow Wright Nanhai District, Nanhai CMO, Xu Rui optoelectronics, Akinobu Group, economic win photoelectric, GeIL large number of high-quality electronics, enterprise, and Zhongshan University, Huazhong University of Hong Kong Science and Technology University and so close the LED cooperate with universities have Zhongshan, Foshan Institute of Technology Research Institute Guangdong flat panel display industry and other public service platform and LED under construction industries of Hong Kong University of Science Engineering Research and Development Center, the existing LED related dozens of businesses and services in 2009, semiconductor lighting industrial output value of 2 billion yuan. Currently the South China Sea to Foshan Lighting, Osram, Snow Wright and some other country and the world’s leading companies as a leader, to the South China Sea area Luocun electric light illumination for the support of considerable size of the lighting appliance industry clusters, and with the close of danzao Hardware , Dali Industrial aluminum, in water, mold, Lion of the photoelectron, Guicheng mechanical equipment manufacturing facilities, and the Foshan region with the country’s largest cluster of small household appliances such as electric light, Foshan and to jointly develop a complete industrial chain lighting.

Since 2009, has also received the South China Sea semiconductor lighting industry developed rapidly. Xu Rui company settled with the Foshan, Nanhai semiconductor lighting industrial technology innovation platform and test base to invest in construction, South China’s largest source market of South China Lighting Electric (International) Electric Light Source Lighting City beginning to take shape, the South China Sea by the Provincial Science and Technology Department identified The new light source for the industrial base of Guangdong, South China Sea has opened up LED industry chain, is expected to end the first breakthrough LED lighting applications to promote the bottleneck, significantly reduce the price of LED products, traditional business restructuring and LED lighting products to find breakthrough universal.

To speed up the development of the industry, the South China Sea area has been introduced in October 2009 to accelerate the development of semiconductor lighting industry support measures related to the establishment of the total size of one billion to 20 billion special fund for industrial development, in enhancing independent innovation capacity, strengthening public platform construction, building demonstration project, promoting investment and financing for industries such as strong support, will rely on independent innovation and industrial agglomeration combined to create from chip research, equipment manufacturing, LED epitaxial wafers and chips, power package, applications development, pilot and production, product testing to market the whole flow of semiconductor lighting industrial chain, the next 3-5 years will be formed 30 billion to 500 billion industrial scale, a well-known semiconductor lighting industrial base.

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Tags: Build, chain, China, Industry, Layout, Lighting, semiconductor, South, whole
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100 times faster transistor d? Development of new carbon-speed-del? amorphous-silicon RFID, semiconductor components, the transistor carbon – printing

Monday, September 6th, 2010

A temp? Perature technology semiconductor manufacturing equipment, such as billboards? Be electronic (electronicbillboards) that the applications? large? scale, and? RFID labels can? be disposable applications ultra-low-cost as possible. But most of the transistors of the temp? Perature the mobility? of? electrons is very? s low num? America only one per cent per volt cm ^ sec (cm2/Vs).? Now, Georgia Institute of Technology (Georgia Institute of Technology, Georgia Tech), the researchers say gr? what? the use of carbon-60 (C60) film Ball Buck (Fuller? ing) or Fuller? ties (Fuller? ing) to make transistors (transistor) channel (channel) is? a ratio of amorphous silicon can be brought product (amorphous)? temp? room temperature? 100 times faster m? Methods of manufacture of transistors.? “We do pr? Not hold out? Be the first? Make the C60 transistors in the laboratory of the temp? Temperatures;? Professor GeorgiaTech BernardKippelen ad? Undeclared: ? The innovation of our R & D r? results is to prove that the process? temp? room temperature and obtained a 3 ~ 5cm2 / Vs such great mobility?? electronic, but may also have good stability? renewable (reproducibility?), low threshold voltage and high switching ratio (report offcurrent). “? global research laboratory? temp? ambient temperature in technology to take advantage of low prices, the? p? e Disaster Yao? efficient? Printing technology Oll-to-roll) printing ink jet or cr? First major? Notches and applications? low co? t such that RFID products; this her? it, you do not need these expensive clean room, the treatment process? high temp? temperature. But there are many fa? Ons trying to use mati? Res organic transistors, but also essay? using the formula for finding new mast? rials for am? the mobility improves? of? electrons in the channel.? other unit? s research has reached more? lev? that the mobility? of? electrons GeorgiaTech group? study, but mostly? through the process? high temp? temperature for? Made? with transistors. While the industry am? Rican has developed an inorganic silicon ink Kovio (inorganicsiliconink) can? Be manufactured?’re Using thin film transistors inkjet printing, but? Temp? Erasure process is much more? Lev? the plastic substrate could afford.? Despite? the r? results GeorgiaTech R & D, non-r? realization proc? d? ? high temp? temperature mobility can reach? of? electrons (Kovio says his mobility? of? electrons and polysilicon as good), they reach the mobility? of? electrons that amorphous silicon? t?. Potential applications of technology as a means of production requires that the rate refreshed? Ciated 16 ms (refresh) the display of the service (for display), they can use plastic substrates? low co? t? continued improvement of the design over the last? res ann? are based on, Kippelen says his Team from research identi? the n? stop? a low temp? temperature? high mobility? of? electrons optimize matt? rials and settings: station:? Our research is low? e on refining organic semiconductors (purification) and the treatment is based on several Sch? are the exp? experience. while the di? electric grid (gatedielectric) and the choice of m? tal to? electrode, but? also play an r? the important. “? Georgia Tech Professor Bernard Kippelen (center)? Temp? Ambient temperature on the transistor and research projects of? Development and research? At the school and BenoitDomercq Zhang Xiao-Hong, a PhD candidate? Work together .? Concern for convenient?, GeorgiaTech component mod? the d ‘? team has been constructed? in the silicon substrate, but the researchers affirm? their use of organic transistors C60 all? s? tions are r? alis? s? temp? ambient temperature. Transistors used? s for? electrode m? tal? temp? ambient temperature, it is used? with? OLED screen and plastics used? s in solar cells transparent? Way (transparentprocess ) d? position made the m? me technology.?? Our? electrode is the use of masks (shadow masks) and the? thermal evaporation (thermalevaporation) process, in the highlight of organic semiconductors ; Kippelen ad? Undeclared:? Gr? this? source m? tal (source) and between the substrate to keep sufficient distance (three feet), allows the substrate can? be whatever they want r? e as overheating process of d? p? t? Then the researchers? students making N-channel and P channel transistor means, enjoy the temp? perature of contents? res organic, manufacturing display? Active matrix for CMOS inverters (inverters), ring oscillator (ringoscillator), logic gate and entered? ment auxiliary circuit, etc.. “Replacing the silicon with a plastic floor, but also our future share research project Kippelen said.? However, the heat? Not manufacturing transistors using C60 or there is a d? Savantage is that they are sensitive? the oxygen? not mean that the components must work in an environment of nitrogen. The researchers plan to re-form a mole? cle of Fuller? do, and in her? one component of vacuum packaging r? solve the problem? me.

Tags: amorphoussilicon, carbon, carbonspeeddel, components, development, Faster, printing, RFID, semiconductor, Times, transistor
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Last offshore South China: the construction of semiconductor lighting chain of the whole sector

Sunday, August 1st, 2010

Foshan is the major production and R & D base of the flashlight, the light output of 2009, 10. 0000000000, with the electric light industry, 45 high-tech companies in the Guangdong region of R & D power source 5, the undertakings concerned upstream and downstream of many 400. Foshan South China Sea as a source of light illuminating the central area of the industry chain, from upstream of the material with, from the light source lighting downstream mold and demand-side complete chain industrial, and tightly integrate all aspects of integrating upstream and downstream of a strong support capability. In order to extend the full benefits of the lighting industry’s traditional electric, the South China Sea is to the semiconductor industry, development of this new lighting system first established high service technology to the financial district of Guangdong, Guangdong Urban Basic Industry, the South China Sea Economic Zone, Luocun new light industrial base, the South China Sea National Park ecological industrial and other carriers in middle age. In lighting semiconductor industrial modernization in the process of collecting snow Wright Nanhai District, Nanhai CMO Optoelectronics Xu Rui, Akinobu group, economic win photoelectric GeIL many electronic products, high quality business and Zhongshan University, Huazhong University of Science and Technology Hong Kong University and so close to the LED to cooperate with universities Zhongshan, Foshan Institute of Technology Research Institute at the Guangdong industry panel flat screen and other platforms -form of public service and LED under construction industries of Hong Kong University of Science Engineering Research and Development Centre, the existing LED dozens of businesses and services in 2009, lighting semiconductor industrial production value of 2 billion yuan. Currently, the South China Sea in Foshan Lighting, Osram, Snow Wright and other countries and leading companies in the world as a leader in South China Luocun Wed lighting electric light for the support of a size large clusters of light industry equipment and with the end of danzao Hardware, Dali Industrial aluminum in water, mold, Lion of the photoelectron, Guicheng mechanical equipment manufacturing facilities, and the region Foshan with the country’s largest cluster of small household appliances such as electric light, Foshan and jointly develop a light industrial chain. Since 2009, also received the South China Sea lighting industry semiconductor developed rapidly. Xu Rui company settled with the Foshan Lighting semiconductor Nanhai industrial platform for technological innovation and the test base for investing in the construction market in southern China’s largest source of China Southern Electric lighting (International) Electric Light Source Lighting of the city begins to take shape, the South China Sea through science and technology provincial department identified the source of light for the new industrial base of Guangdong Sea South China opened LED industry chain, is expected to end the first breakthrough LED lighting applications to promote the bottleneck, significantly reduce the price of LED products, the restructuring of traditional enterprises and products LED lighting breakthrough to find universal. To accelerate the development of industry, the South China Sea was introduced in October 2009 to accelerate the development of supporting the semi-conductor lighting measures to establish the total size of one billion to 20 billion special fund for industrial development, in strengthening the capacity of independent innovation, strengthening the platform of public construction, building projects demonstration, promotion of investment and financing for industries such as the solid support, will rely on independent innovation and industrial agglomeration combined to create chip research, manufacturing equipment, LED epitaxial wafers and chips, power package, application development, and pilot production, testing the product on the market while the flow of semiconductor lighting industrial chain, the next 3-5 years will consist of 30 billion 500 billion on an industrial scale, a base semiconductor lighting industrial well known.

Tags: chain, China, Construction, Last, Lighting, offshore, sector, semiconductor, South, whole
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100 times faster transistor speed development of new carbon beyond the amorphous-silicon RFID, semiconductor components, the transistor carbon – printing

Sunday, July 25th, 2010

At room temperature semiconductor technology for making devices such as electronic billboards will be (electronicbillboards) that large-scale applications, and RFID tags can be disposable applications, ultra-low-cost as possible. But most of the transistors at room temperature electron mobility is very low, only digital one percent per volt cm ^ sec (cm2/Vs). Now, Georgia Institute of Technology (Georgia Institute of Technology, Georgia Tech), the Researchers say that by using carbon-60 (C60) film Ball Buck (fullerenes) or fullerenes (fullerenes) to manufacture transistors (transistor) channel (channel), found a ratio of amorphous silicon can be produced (amorphous ) at room temperature to 100 times faster methods of manufacture of transistors. “We do not claim to be the first to make the C60 transistors at room temperature laboratory,” Professor GeorgiaTech BernardKippelen said: “The innovation of our R & D results is to prove that the process at room temperature and obtained a 3 ~ 5cm2 / Vs such a high electron mobility, but can also have good stability renewable (reproducibility), low threshold voltage, and switching High ratio (offcurrent report). “global research laboratory at room temperature in technology to take advantage of low prices, sword disaster Yao high performance? Printing technology Oll-to-roll) printing ink jet or to create large displays and low-cost applications such as RFID products, in that way, you do not need these expensive room own, the process at high temperature. But there are many ways tries to use organic materials in the transistors, but also tried to use the formula for finding new materials to improve the mobility of electrons in the channel. Other research units have achieved higher than the electron mobility GeorgiaTech study group, but especially through the process at high temperature? Made with transistors. Although U.S. industry has developed an inorganic silicon ink Kovio (inorganicsiliconink), can be manufactured using thin film transistors of inkjet printing, but? Process temperature is much higher than the plastic substrate could afford. Despite the results GeorgiaTech R & D, non-fulfillment process at high temperature can reach the mobility of electrons (Kovio says that mobility of electrons and silicon polycrystalline as good), they achieve the electron mobility than amorphous silicon was. Potential applications of technology as a means of production does not require that the refresh rate of 16 ms (refresh) the display of the service (for display), they can use plastic substrates at low cost. Improvements design in recent years on the basis Kippelen says his research team has identified the need for low temperature high electron mobility optimize the materials and parameters: “Our research is based on the refining organic semiconductors (purification) and treatment based on several years of experience. while the gate dielectric (gatedielectric) and the choice of metal electrode, but also play an important role. “Georgia Tech Professor Bernard Kippelen (center) at room temperature on transistor research and development projects, and researcher at the school and BenoitDomercq Zhang Xiao-Hong, a PhD candidate to work together. The convenience, component GeorgiaTech team model is manufactured in the silicon substrate, but the researchers said their use of organic transistors C60 all elements are made at room temperature. transistors used for the metal electrode at room temperature, it is used with OLED screen and plastics used in transparent solar cells? Way (transparentprocess) evidence given the same technology. “Our sensor is the use of masks (shadow masks) and thermal evaporation (thermalevaporation) process In the highlight of organic semiconductors; Kippelen said: “With the metal source (source) and between the substrate to keep sufficient distance (three feet), allows the substrate can be regarded as overheating process filing. “Then, researchers will study the production of N-channel and P channel transistor means, enjoy the ambient temperature of organic materials, the manufacture of active matrix display for CMOS inverters (inverters), ring oscillator ( ringoscillator), logic gate and the auxiliary drive circuit, etc.. “Replacing the silicon with a plastic floor, but also our future share research project Kippelen said. However, the production line using transistors C60 or there is a disadvantage is that they are sensitive to oxygen means that components must work in an environment of nitrogen. The researchers plan to re-form a fullerene molecule, and in the way of vacuum packing components to solve the problem.

Tags: amorphoussilicon, beyond, carbon, components, development, Faster, printing, RFID, semiconductor, Speed, Times, transistor
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